MBRS240LT3 |
RFQ for MBRS240LT3 |
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| Technical/Catalog Information | MBRS240LT3G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 430mV @ 2A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 2mA @ 40V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRS240LT3G MBRS240LT3G MBRS240LT3GOSDKR ND MBRS240LT3GOSDKRND MBRS240LT3GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MBRS240LT3 | - | SMB(DO-214AA) | 2009+ |
Features |
| • Compact Package with J−Bend Leads Ideal for Automated Handling• Highly Stable Oxide Passivated Junction• Guard−Ring for Overvoltage Protection• Low Forward Voltage Drop• Pb−Free Package is Available |
| Parameter | Symbol |
Value |
Unit |
| Repetitive peak reverse voltage | VRRM |
30 |
V |
| Working peak reverse voltage | VRWM |
30 |
V |
| DC blocking voltage | VR |
30 |
V |
| Average Rectified Forward Current (At Rated VR, TC = 100°C) |
IO | 2.0 | A |
| Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) |
IFRM | 4.0 |
A |
| Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM | 25 | A |
| Storage/Operating Case Temperature |
Tstg, TC | 55 to +150 | °C |
| Operating Junction Temperature | TJ | 55 to +125 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) |
dv/dt | 10,000 | V/s |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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